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2SK3352 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # 2SK3352
Description  General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SK3352 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SK3352
No.8125-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
DC / DC converter applications.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
45
A
Drain Current (Pulse)
IDP
PW
≤10µs, duty cycle≤1%
80
A
Allowable Power Dissipation
PD
1.65
W
Tc=25˚C
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.0
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=20A
19
27
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=20A, VGS=10V
11
15
m
RDS(on)2
ID=10A, VGS=4.5V
15
21
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
1400
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
420
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
210
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
See specified Test Circuit.
530
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
100
ns
Fall Time
tf
See specified Test Circuit.
150
ns
Marking : K3352
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005QA MS IM TA-2658
2SK3352
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications


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