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2SK3352 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SK3352 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page 2SK3352 No.8125-1/4 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • DC / DC converter applications. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 45 A Drain Current (Pulse) IDP PW ≤10µs, duty cycle≤1% 80 A Allowable Power Dissipation PD 1.65 W Tc=25˚C 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.0 2.4 V Forward Transfer Admittance yfs VDS=10V, ID=20A 19 27 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=20A, VGS=10V 11 15 m Ω RDS(on)2 ID=10A, VGS=4.5V 15 21 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 1400 pF Output Capacitance Coss VDS=10V, f=1MHz 420 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 210 pF Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 530 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns Fall Time tf See specified Test Circuit. 150 ns Marking : K3352 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN8125 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 62005QA MS IM TA-2658 2SK3352 N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
Similar Part No. - 2SK3352_05 |
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Similar Description - 2SK3352_05 |
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