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CM400DU-12H Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM400DU-12H
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM400DU-12H Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C
1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66
±0.01
93.0
±0.25
E
1.88
±0.01
48.0
±0.25
F
0.87
22.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
Dimensions
Inches
Millimeters
K
0.71
18.0
L
0.87
22.0
M
0.33
8.5
N
0.10
2.5
P
0.85
21.5
Q
0.98
25.0
R
0.11
2.8
S
0.25 Dia.
6.5 Dia.
T
0.6
15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400DU-12H is a
600V (VCES), 400 Ampere Dual
IGBT Module.
Current Rating
VCES
Type
Amperes
Volts (x 50)
CM
400
12
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM400DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
CM
A
S(4 - Mounting
Holes)
B
3 - M6 Nuts
E
D
Q
K
K
K
F
R
QN
G
P
H
J
U
C
L
M
H
TC Measured
Point
E2
G1
E1
G2
E2
C1
C2E1
T


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