2-573
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
PWR SEN
BIAS GND1
RF IN
NC
PWR REF
RF OUT
RF OUT
RF OUT
16
15
14
13
5
6
7
8
9
10
11
12
4
3
2
1
Bias
RF5117C
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
• IEEE802.11B WLAN Applications
• IEEE802.11G WLAN Applications
• 2.5GHz ISM Band Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
The RF5117C is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117C is designed to maintain linearity
over a wide range of supply voltage and power output.
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 26dB Small Signal Gain
• High Linearity
• 1800MHz to 2800MHz Frequency Range
• +17dBm PO, 11G, <3% EVM
RF5117C
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117C PCBA
Fully Assembled Evaluation Board
0
Rev A5 060517
1.50 TYP
2 PLCS
0.15 CB
-B-
1.37 TYP
2 PLCS
0.15 CB
2 PLCS
0.15 CA
-A-
3.00 SQ.
2.75 SQ.
2 PLCS
0.15 CA
1.00
0.85
0.05
0.01
0.80
0.65
0.05 C
12°
MAX
-C-
SEATING
PLANE
Shaded lead is pin 1.
Dimensions in mm.
CA B
0.10 M
0.30
0.18
0.60
0.24
TYP
0.50
0.55
0.30
1.65
1.35
SQ.
0.23
0.13
4 PLCS
0.45
0.00
4 PLCS
Package Style: QFN, 16-Pin, 3x3
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