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RF3166DSB Datasheet(PDF) 9 Page - RF Micro Devices

Part # RF3166DSB
Description  DUAL-BAND GSM900/DCS POWER AMP MODULE
Download  12 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF3166DSB Datasheet(HTML) 9 Page - RF Micro Devices

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2-499
RF3166D
Rev A2 061006
Theory of Operation
Overview
The RF3166 is a dual-band EGSM900 and DCS1800 power amplifier module that incorporates an indirect closed loop
method of power control. This simplifies the phone design by eliminating the need for the complicated control loop
design. The indirect closed loop appears as an open loop to the user and can be driven directly from the DAC output in
the baseband circuit.
Theory of Operation
The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power con-
trol systems in GSM sense either forward power or collector/drain current. The RF3166 does not use a power detector. A
high-speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a con-
stant bias. The VRAMP signal is multiplied by a factor of 2.3 and the collector voltage for all three stages is regulated to
the multiplied VRAMP voltage. The basic circuit is shown in the following diagram.
By regulating the power, the stages are held in saturation across all power levels. As the required output power is
decreased from full power down to 0dBm, the collector voltage is also decreased. This regulation of output power is
demonstrated in Equation 1 where the relationship between collector voltage and output power is shown. Although load
impedance affects output power, supply fluctuations are the dominate mode of power variations. With the RF3166 regu-
lating collector voltage, the dominant mode of power fluctuations is eliminated.
(Eq. 1)
There are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of
them are:
Current draw and system efficiency
Power variation due to Supply Voltage
Power variation due to frequency
Power variation due to temperature
Input impedance variation
Noise power
Loop stability
Loop bandwidth variations across power levels
Burst timing and transient spectrum trade offs
Harmonics
VRAMP
-
+
-
+
H(s)
VBATT
Saturation
Detector
RF IN
RF OUT
TX ENABLE
3 dB BW
300 kHz
P
dBm
10
2 V
CC
V
SAT
()
2
8 R
LOAD
10
3
⋅⋅
-------------------------------------------
log
=


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