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SP4446 Datasheet(PDF) 5 Page - Sipex Corporation

Part # SP4446
Description  High Output Voltage Boost Regulator LCD Bias Regulator
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Manufacturer  SIPEX [Sipex Corporation]
Direct Link  http://www.sipex.com
Logo SIPEX - Sipex Corporation

SP4446 Datasheet(HTML) 5 Page - Sipex Corporation

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Date: 1/2/06
SP4446 High Output Voltage Boost Regualtor, LCD Bias Regulator
© Copyright 2006 Sipex Corporation
APPLICATION INFORMATION: Continued
The formula and table for the resistor selection
are shown below:
R1 =
(
VOUT
- 1
) • R2
1.22
VOUT (V)
R1 (
)R2 ()
12
1M
113K
15
1M
88.7K
18
1M
73.2K
20
1M
64.9K
30
1M
42.2K
Table 3. Divider Resistor Selection
Layout Considerations
Both the input capacitor and the output capacitor
should be placed as close as possible to the IC. This
can reduce the copper trace resistance which di-
rectly effects the input and output ripple. The
feedback resistor network should be kept close to
the FB pin to minimize copper trace connections
that can inject noise into the system. The ground
connectionforthefeedbackresistornetworkshould
connect directly to the GND pin or to an analog
ground plane that is tied directly to the GND pin.
The inductor and the Schottky diode should be
placed as close as possible to the switch pin to
minimize the noise coupling to the other circuits,
especially the feedback network.
PIN Diode Driver
The SP4446 can be used as PIN diode driver as
shown in Figure. 2.
Fig. 2. Pin Diode Driver
3.3V or 5V
R1
1M
C1
4.7uF
30V
R2
42.2K
U1
SP4446
1
2
3
4
5
SHDN
Murata LQH32CN100K21
3 to 5 mA
DS
MBR0530
C2
47pF
1.22V
L1 10uH 0.3A
C3
2.2uF
3.3V or 5V
R1
1M
C1
4.7uF
30V
R2
42.2K
U1
SP4446
1
2
3
4
SW
GND
FB
SHDN
V
IN
Murata LQH32CN100K21
V
IN
3 to 5 mA
DS
MBR0530
V
OUT
C2
47pF
1.22V
L1 10uH 0.3A
C3
2.2uF
V
IN
DS
C1
4.7uF
Q1
MMBT2907A
R1
1M
R3
154K
20V
1.22V
C2
47pF
R2
64.9K
U1
SP4446
1
2
3
4
5
SW
GND
FB
SHDN
V
IN
V
OUT
L1
10uH
C3
2.2uF
When the SP4446 is active, the voltage set at the
emitter of the transistor exceeds the input volt-
age, forcing the transistor into the saturation
region. When the SP4446 is shut down, the input
voltage exceeds the emitter voltage, thus the
transistor becomes inactive and provides high-
impedance isolation between the input and load.
Efficiency will be slightly sacrificed because of
the saturation voltage and base current of the PNP
transistor.
Fig. 3. Load Disconnect in Shutdown
Two Resistors (R1=1MΩ, R2=42.2KΩ) are used
to program the output voltage to be 30V. When
input voltage is 3.3V or 5V, it can supply a
maximum current of 3mA and 5mA to the load.
Load Disconnect in Shutdown
When SP4446 is shut down, the load is still
connected to the input. In applications that re-
quire output isolation during shutdown, an ex-
ternalPNPtransistor(forexample MMBT2907A)
can be added as shown in Figure 3.


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