SAA4955TJ datasheet(9/28 Pages) PHILIPS

Part #	SAA4955TJ

Description	2.9-Mbit field memory

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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9 / 28 page

1999 Apr 29

9

Philips Semiconductors

Product speciﬁcation

2.9-Mbit ﬁeld memory

SAA4955TJ

Cascade operation

If a longer delay is needed, the total storage depth can be

increased beyond 2949264 bits by cascading several

SAA4955TJs. For details see the interconnection and

timing diagrams (Figs 17 and 18).

Test mode operation

The SAA4955TJ incorporates a test mode not intended for

customer use. If WE and RSTW are held HIGH

continuously for 1024 SWCK clock cycles, the

SAA4955TJ will enter test mode. It will exit test mode if WE

is LOW for a single SWCK cycle or if RSTW is LOW for

2 SWCK clock cycles.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Machine model: equivalent to discharging a 200 pF capacitor through a 0

Ω series resistor (‘0 Ω’ is actually

0.75

µH+10 Ω).

2. Human body model: equivalent to discharging a 100 pF capacitor through a 1500

Ω series resistor.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDD, VDD(O) supply voltages

−0.5

+5

V

VDD(P)

supply voltage for protection circuits

−0.5

+5.5

V

VI

input voltage

VDD(P) =5V

−0.5

+5.5

V

VDD =VDD(O) =VDD(P) = 3.3 V −0.5

+3.8

V

VO

output voltage

VDD(P) =5V

−0.5

+5

V

VDD =VDD(O) =VDD(P) = 3.3 V −0.5

+3.8

V

IDD(tot)

total supply current

−

200

mA

∆V

voltage difference between GND,

GNDO and GNDP

−0.5

+0.5

V

IO

short circuit output current

−

50

mA

Ptot

total power dissipation

−

750

mW

Tstg

storage temperature

−20

+150

°C

Tj

junction temperature

0

125

°C

Tamb

ambient temperature

0

70

°C

Ves

electrostatic handling

note 1

−150

+200

V

note 2

−2000

+2000

V

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

in free air

60

K/W

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