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SA8016WC Datasheet(PDF) 7 Page - NXP Semiconductors |
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SA8016WC Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 20 page Philips Semiconductors Product specification SA8016 2.5GHz low voltage fractional-N synthesizer 1999 Nov 04 7 SYMBOL UNIT MAX. TYP. MIN. CONDITIONS PARAMETER Phase noise (RSET = 7.5 kΩ, CP = 00) Synthesizer’s contribution to close-in phase noise of 900 MHz RF signal at 1 kHz offset. GSM fREF = 13MHz, TCXO, – –90 – dBc/Hz L Synthesizer’s contribution to close-in phase noise of 1800 MHz RF signal at 1 kHz offset. fREF = 13MHz, TCXO, fCOMP = 1MHz indicative, not tested – –83 – dBc/Hz L (f) Synthesizer’s contribution to close-in phase noise of 800 MHz RF signal at 1 kHz offset. TDMA fREF = 19.44MHz, TCXO, – –85 – dBc/Hz Synthesizer’s contribution to close-in phase noise of 2100 MHz RF signal at 1 kHz offset. fREF = 19.44MHz, TCXO, fCOMP = 240kHz indicative, not tested – –77 – dBc/Hz Interface logic input signal levels; pins 13, 14, 15, 16 VIH HIGH level input voltage 0.7*VDD – VDD+0.3 V VIL LOW level input voltage –0.3 – 0.3*VDD V ILEAK Input leakage current logic 1 or logic 0 –0.5 – +0.5 µA Lock detect output signal (in push/pull mode); pin 1 VOL LOW level output voltage Isink = 2mA – – 0.4 V VOH HIGH level output voltage Isource = –2mA VDD–0.4 – – V NOTES: 1. ISET = V SET R SET bias current for charge pumps. 2. The relative output current variation is defined as: DI OUT I OUT + 2. (I 2–I1) I(I 2 ) I1)I ; with V 1 + 0.7V, V2 + VDDCP –0.8V (See Figure 4.) I2 I1 I2 I1 V1 V2 CURRENT VPH SR00602 IZOUT Figure 4. Relative Output Current Variation |
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