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BAW56 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAW56 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page  2003 Mar 25 4 Philips Semiconductors Product specification High-speed double diode BAW56 THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 360 K/W Rth j-a thermal resistance from junction to ambient note 1 500 K/W GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 0 200 300 0 100 200 MBD033 100 I F (mA) T ( C) amb o single diode loaded double diode loaded (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. handbook, halfpage 02 300 IF (mA) 0 100 200 MBG382 1 VF (V) (1) (3) (2) Fig.3 Forward current as a function of forward voltage. |
Similar Part No. - BAW56_03 |
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Similar Description - BAW56_03 |
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