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MH32S72DBFA-6 Datasheet(PDF) 12 Page - Mitsubishi Electric Semiconductor |
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MH32S72DBFA-6 Datasheet(HTML) 12 Page - Mitsubishi Electric Semiconductor |
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12 / 56 page  2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM MH32S72DBFA -6 30/Sep. /1999 MIT-DS-352-0.0 MITSUBISHI ELECTRIC MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. POWER ON SEQUENCE Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning. 1. Apply power and start clock. Attempt to maintain CKE high, DQMB high and NOP condition at the inputs. 2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500µs. 3. Issue precharge commands for all banks. (PRE or PREA) 4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands. 5. Issue a mode register set command to initialize the mode register. After these sequence, the SDRAM is idle state and ready for normal operation. MODE REGISTER Burs t Length, Burs t Type and /CAS Latency can be programmed by setting the mode register(MRS). The mode regis ter s tores these date until the next MRS command, which may be issue when both banks are in idle state. After tRSC from a MRS command, the SDRAM is ready for new command. 12 R: Reserved for Future Use BL 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 BURST LENGTH BT= 0 BT= 1 1 2 4 8 R R R FP 1 2 4 8 R R R R 0 1 BURST TYPE SEQUENTIAL INTERLEAVED A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 BA1 BA0 0 0 WM 0 0 LTMODE BT BL 0 0 CL 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 LATENCY MODE /CAS LATENCY 2 3 R R R R R R FP: Full Page 0 1 WRITE MODE BURST SINGLE BIT /CS /RAS /CAS /WE BA0,1 A11-A0 CLK V |
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