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IRFR3412PBF Datasheet(PDF) 1 Page - International Rectifier

Part No. IRFR3412PBF
Description  SMPS MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFR3412PBF Datasheet(HTML) 1 Page - International Rectifier

 
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www.irf.com
1
12/03/04
IRFR3412PbF
IRFU3412PbF
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
100V
0.025
48A
†
PD - 95498A
l Switch Mode Power Supply (SMPS)
l Motor Drive
l
Bridge Converters
l
All Zero Voltage Switching
l Lead-Free
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
48
†
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
34
†
A
IDM
Pulsed Drain Current

190
PD @TC = 25°C
Power Dissipation
140
W
Linear Derating Factor
0.95
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
ƒ
6.4
V/ns
TJ
Operating Junction and
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 second
300(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
„
trr
Reverse Recovery Time
–––
68
100
ns
TJ = 125°C, IF = 29A
Qrr
Reverse RecoveryCharge
–––
160
240
nC
di/dt = 100A/µs
„
IRRM
Reverse RecoveryCurrent
–––
4.5
6.8
A
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
D
G
Diode Characteristics
48
†
190
A
D-Pak
I-Pak
IRFR3412
IRFU3412


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