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IRFR3412PBF Datasheet(PDF) 2 Page - International Rectifier

Part No. IRFR3412PBF
Description  SMPS MOSFET
Download  10 Pages
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRFR3412PBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRFR/U3412PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
25
–––
–––
S
VDS = 50V, ID = 29A
Qg
Total Gate Charge
–––
59
89
ID = 29A
Qgs
Gate-to-Source Charge
–––
21
32
nC
VDS = 50V
Qgd
Gate-to-Drain ("Miller") Charge
–––
17
26
VGS = 10V,
„
td(on)
Turn-On Delay Time
–––
19
–––
VDD = 50V
tr
Rise Time
–––
68
–––
ID = 29A
td(off)
Turn-Off Delay Time
–––
44
–––
RG = 6.8Ω
tf
Fall Time
–––
37
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
3430 –––
VGS = 0V
Coss
Output Capacitance
–––
270
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
150
–––
pF
ƒ = 1.0MHz
Coss
Output Capacitance
–––
1040 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
170
–––
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
270
–––
VGS = 0V, VDS = 0V to 80V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
160
mJ
IAR
Avalanche Current

–––
29
A
EAR
Repetitive Avalanche Energy

–––
14
mJ
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.10
–––
V/°C
Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.025
VGS = 10V, ID = 29A
„
VGS(th)
Gate Threshold Voltage
3.5
–––
5.5
V
VDS = VGS, ID = 250µA
–––
–––
1.0
µA
VDS = 95V, VGS = 0V
–––
–––
250
VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20V
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ƒ ISD ≤ 29A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting T
J = 25°C, L = 0.38mH, RG = 25Ω,
IAS = 29A, (See Figure 12a)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
†Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.05
RθJA
Junction-to-Ambient (PCB mount)*
–––
50
°C/W
RθJA
Junction-to-Ambient
–––
110
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994


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