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MH32S72BBFA-7 Datasheet(PDF) 12 Page - Mitsubishi Electric Semiconductor

Part No. MH32S72BBFA-7
Description  2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MH32S72BBFA-7 Datasheet(HTML) 12 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI
ELECTRIC
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72BBFA -7,-8
MITSUBISHI LSIs
16/Jun. /1999
MIT-DS-331-0.0
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent
a SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB high and NOP
condition at the inputs.
2. Maintain stable power, stable cock, and NOP input conditions for a minimum of 500µs.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be
programmed by setting the mode register(MRS). The mode
register stores these date until the next MRS command, which
may be issue when both banks are in idle state. After tRSC
from a MRS command, the SDRAM is ready for new command.
12
R: Reserved for Future Use
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
BT= 1
1
2
4
8
R
R
R
FP
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENT IAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
WM
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
FP: Full Page
0
1
WRITE
MODE
BURST
SINGLE BIT
/CS
/RAS
/CAS
/WE
BA0,1 A11-A0
CLK
V


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