DXTA13

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Pinning

1 = Base

2 = Collector

3 = Emitter

Description

Designed for applications requiring extremely high

current gain.

SOT-89

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40)

.066(1.70)

.059(1.50)

.167(4.25)

.159(4.05)

.016(0.41)

.014(0.35)

.120(3.04)

.117(2.96)

.181(4.60)

.173(4.40)

.060(1.52)

.058(1.48)

.020(0.51)

.014(0.36)

.102(2.60)

.095(2.40)

1

2

3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

30

V

Collector-Emitter Voltage

30

V

Emitter-Base Voltage

10

V

Collector Current

300

mA

Total Power Dissipation

1

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

30

-

-

V

Collector-Emitter Breakdown Voltage

30

-

-

V

Emitter-Base Breakdown Volatge

10

-

-

V

Collector Cutoff Current

-

-

100

nA

Emitter Cutoff Current

-

-

100

nA

-

-

1.5

V

-

-

2

V

5K

-

-

-

10K

-

-

-

Transition Frequency

125

-

-

MHz

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%