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DXTA13 Datasheet(PDF) 1 Page - Dc Components |
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1 / 1 page DXTA13 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Pinning 1 = Base 2 = Collector 3 = Emitter Description Designed for applications requiring extremely high current gain. SOT-89 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .066(1.70) .059(1.50) .167(4.25) .159(4.05) .016(0.41) .014(0.35) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .060(1.52) .058(1.48) .020(0.51) .014(0.36) .102(2.60) .095(2.40) 1 2 3 Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 300 mA Total Power Dissipation PD 1 W Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 30 - - V IC=100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCES 30 - - V IC=100 µA, IB=0 Emitter-Base Breakdown Volatge BVEBO 10 - - V IE=10 µA, IC=0 Collector Cutoff Current ICBO - - 100 nA VCB=30V, IE=0 Emitter Cutoff Current IEBO - - 100 nA VEB=10V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA Base-Emitter On Voltage(1) VBE(on) - - 2 V IC=100mA, VCE=5V DC Current Gain(1) hFE1 5K - - - IC=10mA, VCE=5V hFE2 10K - - - IC=100mA, VCE=5V Transition Frequency fT 125 - - MHz VCE=5V, f=100MHz, IC=10mA Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
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