RX1214B80W datasheet(4/12 Pages) PHILIPS

Part #	RX1214B80W

Description	NPN microwave power transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1997 Feb 14

4

Philips Semiconductors

Product speciﬁcation

NPN microwave power transistors

RX1214B80W; RX1214B130Y

THERMAL CHARACTERISTICS

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”.

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

Tmb =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

Microwave performance up to Tmb =25 °C in a common-base test circuit as shown in Fig.3.

List of components (see Fig.3)

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-mb

thermal resistance from junction to mounting base Tj = 120 °C

1.75

K/W

Rth mb-h

thermal resistance from mounting base to heatsink note 1

0.2

K/W

Zth j-h

thermal impedance from junction to heatsink

tp = 150 µs; δ = 5%;

notes 1 and 2

0.4

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =50V

−

6mA

IEBO

emitter cut-off current

IC = 0; VEB = 1.5 V

−

0.6

mA

V(BR)CES

collector-emitter breakdown voltage

IC = 60 mA; VBE =0

60

−

V

MODE OF

OPERATION

CONDITIONS

f

(GHz)

VCC

(V)

PL

(W)

Gp

(dB)

ηC

(%)

Class C

tp = 150 µs; δ = 5%

1.2 to 1.4

50

≥130; typ. 140

≥7; typ. 7.5

≥35; typ. 39

tp = 500 µs; δ = 10%

1.2 to 1.4

40

typ. 80

typ. 8.5

typ. 40

COMPONENT

DESCRIPTION

VALUE

DIMENSIONS

CATALOGUE NO.

L1

0.5 mm copper wire

total length = 15 mm

C1

trimmer capacitor

0.6

− 5 pF

Tekelec, ref AT3-7271SL

C2

chip capacitor

C3

tantalum capacitor

10

µF, 50 V

C4

feedthrough bypass capacitor

Erie, ref.1250-003

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