1997 Feb 18

3

Philips Semiconductors

Product specification

Microwave power transistor

RX1214B170W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

65

V

collector-emitter voltage

−

65

V

collector-emitter voltage

open base

−

15

V

emitter-base voltage

open collector

−

3V

collector current

−

15

A

total power dissipation

−

350

W

storage temperature

−65

+200

°C

junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; note 1

−

235

°C

Fig.2 Power derating curve.

handbook, halfpage

0

50

100

200

100

0

MLC453

150

T

( C)

o

mb

Ptot

(W)

200

300

400