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MPXV5004G Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc

Part No. MPXV5004G
Description  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MPXV5004G Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc

 
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Sensors
Freescale Semiconductor
3
MPXV5004G
ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the gauge configuration in the basic
chip carrier (Case 482). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
The MPXV5004G series sensor operating characteristics
are based on use of dry air as pressure media. Media, other
than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the MPXV5004G to the A/D input of
the microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 shows the sensor output signal relative to
pressure input. Typical, minimum and maximum output
curves are shown for operation over a temperature range of
10
°C to 60°C using the decoupling circuit shown in Figure 3
The output will saturate outside of the specified pressure
range.
Figure 2. Cross-Sectional Diagram (Not to Scale)
Figure 3. Recommended Power Supply Decoupling and
Output Filtering.
(For additional output filtering, please refer to Application
Note AN1646.)
Figure 4. Output versus Pressure Differential
at ±2.5% VFSS
(See Note 5 in Operating Characteristics)
Fluorosilicone
Gel Die Coat
Wire Bond
Die
P1
Stainless
Steel Cap
Thermoplastic
Case
Die Bond
Differential Sensing
Element
P2
Lead Frame
+5 V
1.0
µF
0.01
µF
470 pF
GND
Vs
Vout
IPS
OUTPUT
5.0
4.0
2.0
3.0
1.0
Max
Min
Typical
2 kPa
200 mm H2O
4 kPa
400 mm H2O
TRANSFER FUNCTION:
Vout = VS*[(0.2*P) + 0.2] ± 2.5% VFSS
VS = 5.0 V ± 0.25 Vdc
TEMP = 10 to 60
°C


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