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MPXV4006G Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc

Part No. MPXV4006G
Description  Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MPXV4006G Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc

 
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MPXV4006G
Sensors
Freescale Semiconductor
3
ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION, AND SIGNAL CONDITIONING
The performance over temperature is achieved by
integrating the shear-stress strain gauge, temperature
compensation, calibration and signal conditioning circuitry
onto a single monolithic chip.
Figure 2 illustrates the gauge configuration in the basic
chip carrier (Case 482). A fluorosilicone gel isolates the die
surface and wire bonds from the environment, while allowing
the pressure signal to be transmitted to the silicon diaphragm.
The MPXV4006G series sensor operating characteristics
are based on use of dry air as pressure media. Media, other
than dry air, may have adverse effects on sensor
performance and long-term reliability. Internal reliability and
qualification test for dry air, and other media, are available
from the factory. Contact the factory for information regarding
media tolerance in your application.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
Figure 4 shows the sensor output signal relative to
pressure input. Typical, minimum and maximum output
curves are shown for operation over a temperature range of
10
°C to 60°C using the decoupling circuit shown in Figure 3.
The output will saturate outside of the specified pressure
range.
Figure 2. Cross Sectional Diagram SOP
(Not to Scale)
Figure 3. Recommended Power Supply Decoupling
and Output Filtering Recommendations
(For additional output filtering, please refer to
Application Note AN1646.)
Figure 4. Output versus Pressure Differential
Fluorosilicone
Gel Die Coat
Wire
Bond
Differential Sensing
Element
Thermoplastic
Case
Stainless
Steel Cap
Lead
Frame
P1
P2
Die Bond
Die
1.0
µF
IPS
470 pF
OUTPUT
Vs
+5 V
0.01
µFGND
Vout
Max
Min
Differential Pressure (kPa)
See Note 5 in Operating Characteristics
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
03
6
Typical
VS = 5.0 V ± 0.25 Vdc
TEMP = 10 to 60
° C
Transfer Function:
Vout = VS*[(0.1533*P) + 0.045] ± 5% VFSS


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