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DMBT8050 Datasheet(PDF) 1 Page - Dc Components |
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DMBT8050 Datasheet(HTML) 1 Page - Dc Components |
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1 / 1 page DMBT8050 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. Pinning 1 = Base 2 = Emitter 3 = Collector Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Total Power Dissipation PD 225 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Rank C D E Range 120~200 150~350 250~500 Classification of hFE .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .089(0.25) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) 2 1 3 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 25 - - V IC=10 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 20 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=10 µA, IC=0 Collector Cutoff Current ICBO - - 1 µA VCB=20V, IE=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=500mA, IB=50mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=500mA, IB=50mA DC Current Gain(1) hFE 120 - 500 - IC=50mA, VCE=1V Transition Frequency fT 150 - - MHz IC=20mA, VCE=10V, f=100MHz Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
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