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DCR150-4 Datasheet(PDF) 1 Page - Dc Components

Part No. DCR150-4
Description  TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 200 to 600 Volts
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Maker  DCCOM [Dc Components]
Homepage  http://www.dccomponents.com
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DCR150-4 Datasheet(HTML) 1 Page - Dc Components

   
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DCR150-4
THRU
DCR150-8
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 200 to 600 Volts
CURRENT - 1.5 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 200 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
Pinning
1 = Cathode, 2 = Gate, 3 = Anode
TO-92
Dimensions in inches and (millimeters)
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)
Typ
.050
(1.27)
Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
5oTyp
2oTyp
5oTyp
2oTyp
3 2 1
Characteristic
Symbol
Rating
Unit
Peak Repetitive Off-State
DCR150-4
VDRM,
200
Voltage and Reverse Voltage
DCR150-6
VRRM
400
V
DCR150-8
600
On-State RMS Current
IT(RMS)
1.5
A
(TA=57oC, 180o Conduction Angles)
Peak Non-repetitive Surge Current
ITSM
15
A
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
IGM
1.0
A
Forward Peak Gate Power Dissipation
PGM
0.1
W
Forward Average Gate Power Dissipation
PG(AV)
0.01
W
Operating Junction Temperature
TJ
-40 to +110
o
C
Storage Temperature
TSTG
-40 to +150
o
C
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Peak Repetitive Forward or Reverse
TJ=25oC
IDRM, IRRM
-
-
10
µA
VAK=Rated VDRM or VRRM
Off-State Blocking Current
TJ=110oC
-
-
200
RGK=1K
Peak Forward On-State Voltage
VTM
-
-
1.7
V
ITM=1A Peak
Continuous DC Gate Trigger Current
IGT
-
-
200
µA
VAK=7V DC, RL=100
Continuous DC Gate Trigger Voltage
VGT
-
-
0.8
V
VAK=7V DC, RL=100
DC Holding Current
IH
GK
=1K
Critical Rate-of-Rise of Off-State Voltage
dv/dt
-
25
-
V/
µS
RGK=1K
Gate Controlled Turn-on Time(tD+tR)
Tgt
-
3.5
-
µsec
IGT=10mA
Thermal Resistance, Junction to Case
R
θJC
-
75
-
o
C/W
-
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
DC COMPONENTS CO., LTD.
-
-
5.0
mA
R


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