1999 Apr 14

2

Philips Semiconductors

Product specification

PNP switching transistor

PZT3906

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• High-speed switching.

DESCRIPTION

PNP switching transistor in a SOT223 plastic package.

NPN complement: PZT3904.

PINNING

PIN

DESCRIPTION

1

base

2, 4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

handbook, halfpage

4

12

3

MAM288

Top view

3

2, 4

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−40

V

collector-emitter voltage

open base

−−40

V

emitter-base voltage

open collector

−−6V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−100

mA

total power dissipation

−

1.05

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C