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MPVZ5150 Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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MPVZ5150 Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 7 page ![]() MPVZ5150 Sensors Freescale Semiconductor 3 ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING Figure 2 shows the sensor output signal relative to pressure input. Typical, minimum, and maximum output curves are shown for operation over a temperature range of 0° to 85°C using the decoupling circuit shown in Figure 4. The output will saturate outside of the specified pressure range. Figure 3 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482). A gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. Operating characteristics, internal reliability and qualification tests are based on use of dry clean air as the pressure media. Media other than dry clean air may have adverse effects on sensor performance and long term reliability. Contact the factory for information regarding media compatibility in your application. Figure 2. Output Vs. Pressure Differential Figure 3. Cross Sectional Diagrams (Not to Scale) Figure 4 shows the recommended decoupling circuit for interfacing the output of the integrated sensor to the A/D input of a microprocessor or microcontroller. Proper decoupling of the power supply is recommended. Figure 4. Recommended Power Supply Decoupling and Output Filtering (For additional output filtering, please refer to Application Note AN1646) 5 4 3 2 1 0 Offset Pressure (kPa) (Typ) Vout = VS*(0.006*P(kPa)+0.04) ± (PE * TM * 0.006 * Vs) VS = 5.0 V ± 0.25 Vdc PE = 3.75 kPa TM = 1 @ 0 to 85°C TM = 3 @ +125°C TM = 3 @ -40°C Vs = 5.0 V +/- 0.25 Vdc MAX TYP MIN Gel Die Coat Wire Bond Die P1 Stainless Steel Cap Thermoplastic Case Die Bond Differential Sensing Element P2 Lead Frame 470 pF Vs +5.0 V 0.01 µF GND VOUT IPS OUTPUT 1.0 µF IPS OUTPUT |