MPVZ5150 datasheet(3/7 Pages) FREESCALE | Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated

3 / 7 page

MPVZ5150

Sensors

Freescale Semiconductor

ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING

Figure 2 shows the sensor output signal relative to

pressure input. Typical, minimum, and maximum output

curves are shown for operation over a temperature range of

0° to 85°C using the decoupling circuit shown in Figure 4. The

output will saturate outside of the specified pressure range.

Figure 3 illustrates the Differential or Gauge configuration

in the basic chip carrier (Case 482). A gel isolates the die

surface and wire bonds from the environment, while allowing

the pressure signal to be transmitted to the silicon diaphragm.

Operating characteristics, internal reliability and qualification

tests are based on use of dry clean air as the pressure media.

Media other than dry clean air may have adverse effects on

sensor performance and long term reliability. Contact the

factory for information regarding media compatibility in your

application.

Figure 2. Output Vs. Pressure Differential

Figure 3. Cross Sectional Diagrams (Not to Scale)

Figure 4 shows the recommended decoupling circuit for

interfacing the output of the integrated sensor to the A/D input

of a microprocessor or microcontroller. Proper decoupling of

the power supply is recommended.

Figure 4. Recommended Power Supply Decoupling and Output Filtering

(For additional output filtering, please refer to Application Note AN1646)

Offset

Pressure (kPa)

(Typ)

Vout = VS*(0.006*P(kPa)+0.04)

± (PE * TM * 0.006 * Vs)

VS = 5.0 V ± 0.25 Vdc

PE = 3.75 kPa

TM = 1 @ 0 to 85°C

TM = 3 @ +125°C

TM = 3 @ -40°C

Vs = 5.0 V +/- 0.25 Vdc

MAX

TYP

MIN

Gel Die Coat

Wire Bond

Die

Stainless

Steel Cap

Thermoplastic

Case

Die Bond

Differential Sensing

Element

Lead Frame

470 pF

+5.0 V

0.01 µF

GND

VOUT

IPS

OUTPUT

1.0 µF

IPS

OUTPUT

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