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CEFB103-G Datasheet(PDF) 2 Page - Comchip Technology |
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CEFB103-G Datasheet(HTML) 2 Page - Comchip Technology |
2 / 2 page Page2 “-G” suffix designates RoHS compliant Version SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFB101-G Thru CEFB105-G) Fig.1- Reverse Characteristics Percent of Rated Peak Reverse Voltage (%) 0 15 30 45 60 75 90 105 120 135 150 100 10 1.0 0.1 0.01 Forward Voltage (V) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig.2 - Forward Characteristics CEFB101-G ~ 103-G CEFB104-G CEFB105-G Pulse width 300uS 4% duty cycle 10 1.0 0.1 0.01 0.001 Fig. 3 - Junction Capacitance Fig.4 - Non Repetitive Forward Surge Curre Number of Cycles at 60Hz Fig.5 - Test Circuit Diagram and Reverse Recovery Time Characteristics NOTES: 1. Rise Times = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. Fig. 6 - Current Derating Curve Ambient Temperature SET TIME BASE FOR 50 / 10ns / cm Single Phase Half Wave 60Hz 0 25 50 75 100 125 150 175 trr 1cm OSCILLISCOPE D.U.T. NONINDUCTIVE NONINDUCTIVE 0.01 0.1 1.0 10 100 CEFB104-G ~ 105-G CEFB104-G ~ 105-G f=1MHz and applied 4VDC reverse voltage |
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Similar Description - CEFB103-G |
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