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MH32S72APHB-6 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. MH32S72APHB-6
Description  2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MH32S72APHB-6 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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MH32S72APHB -6,-7,-8
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM
MITSUBISHI LSIs
(
/ 55 )
MITSUBISHI
ELECTRIC
17.Mar.2000
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0380-0.1
4
Serial Presence Detect Table I
Byte
Function described
SPD enrty data
SPD DATA(hex)
0
Defines # bytes written into serial memory at module mfgr
128
80
1
Total # bytes of SPD memory device
256 Bytes
08
2
Fundamental memory type
SDRAM
04
3
# Row Addresses on this assembly
A0-A11
0C
4
# Column Addresses on this assembly
A0-A9
0A
5
# Module Banks on this assembly
2BANK
02
6
Data Width of this assembly...
x72
48
7
... Data Width continuation
0
00
8
Voltage interface standard of this assembly
LVTTL
01
9
SDRAM Cycletime at Max. Supported CAS Latency (CL).
A0
Cycle time for CL=3
10
SDRAM Access from Clock
6ns
60
tAC for CL=3
11
DIMM Configuration type (Non-parity,Parity,ECC)
ECC
02
12
Refresh Rate/Type
self refresh(15.625uS)
80
13
SDRAM width,Primary DRAM
x8
08
14
Error Checking SDRAM data width
x8
08
15
Minimum Clock Delay,Back to Back Random Column Addresses
1
01
16
Burst Lengths Supported
1/2/4/8/Full page
8F
17
# Banks on Each SDRAM device
4bank
04
18
CAS# Latency
19
CS# Latency
0
01
20
Write Latency
0
01
21
SDRAM Module Attributes
non-buffered,non-registered
00
22
SDRAM Device Attributes:General
Precharge All,Auto precharge
0E
23
SDRAM Cycle time(2nd highest CAS latency)
13ns
D0
Cycle time for CL=2
24
SDRAM Access form Clock(2nd highest CAS latency)
7ns
70
tAC for CL=2
25
SDRAM Cycle time(3rd highest CAS latency)
N/A
00
N/A
00
26
SDRAM Access form Clock(3rd highest CAS latency)
27
Precharge to Active Minimum
20ns
14
28
Row Active to Row Active Min.
15ns
0F
10ns
-8
-8
-7
10ns
A0
6ns
60
-7
29
RAS to CAS Delay Min
22.5ns
17
30
Active to Precharge Min
50ns
32
-7,-8
-6
75
7.5ns
-7,-8
-6
5.4ns
54
2/3
06
-6
10ns
A0
-6
6ns
60
-7,-8
-6
22.5ns
17
-7,-8
-6
-7,-8
-6
-7,-8
-6
20ns
14
20ns
14
45ns
2D


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