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PTN3500 Datasheet(PDF) 9 Page - NXP Semiconductors |
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PTN3500 Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page Philips Semiconductors Product specification PTN3500 Maintenance and control device 2001 Jan 17 9 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. SYMBOL PARAMETER MIN MAX UNIT VCC Supply Voltage –0.5 4.0 V VI Input Voltage VSS – 0.5 5.5 V II DC Input Current –20 20 mA IO DC Output Current –25 25 mA IDD Supply Current –100 100 mA ISS Supply Current –100 100 mA Ptot Total Power Dissipation 400 mW PO Total Power Dissipation per Output 100 mW TSTG Storage Temperature –65 +150 _C TAMB Operating Temperature –40 +85 _C VESD Electrostatic Discharge: Human Body Model, 1.5 k Ω, 100 pF – >2000 V Machine Model, 0 Ω, 200 pF – >200 V DC ELECTRICAL CHARACTERISTICS Tamb = –40_C to +85_C unless otherwise specified; VCC = 3.3 V SYMBOL PARAMETER MIN TYP MAX UNIT Supply VDD Supply Voltage 2.5 3.3 3.6 V IDDQ Standby Current; A0, A1, A2, WC = HIGH 60 µA IDD1 Supply Current Read 1 mA IDD2 Supply Current Write 2 mA VPOR Power on Reset Voltage 2.4 V Input SCL; input, output SDA VIL Input LOW voltage –0.5 0.3 VDD V VIH Input HIGH voltage 0.7 VDD 5.5 V IOL Output LOW current @ VOL = 0.4 V 3 mA IL Input leakage current @ VI = VDD or VSS –1 1 µA CI Input capacitance @ VI = VSS 7 pF I/O Expander Port VIL Input LOW voltage –0.5 0.3 VDD V VIH Input HIGH voltage 0.7 VDD 5.5 V IIHL(max) Input current through protection diodes –400 400 µA IOL Output LOW current @ VOL = 1 V 10 25 mA IOH Output HIGH current @ VOH = Vss 30 100 300 µA IOHt Transient pull-up current 2 mA CI Input Capacitance 10 pF CO Output Capacitance 10 pF Address Inputs (A0, A1, A2), WC input VIL Input LOW voltage –0.5 0.3 VDD V VIH Input HIGH voltage 0.7 VDD 5.5 V IL Input leakage current @ VI = VDD –1 1 µA Input leakage (pull-up) current @ VI = VSS 10 25 100 µA |
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