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PSMN165-200K Datasheet(PDF) 3 Page - NXP Semiconductors

Part No. PSMN165-200K
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN165-200K Datasheet(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 16 January 2001
3 of 13
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 5V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
Tsp =25 °C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa17
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
sp
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ae06
10-2
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 µs
100 µs
tp
tp
T
P
t
T
δ =


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