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PSMN165-200K Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. PSMN165-200K
Description  N-channel enhancement mode field-effect transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN165-200K Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
PSMN165-200K
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 16 January 2001
5 of 13
9397 750 07896
© Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS =0V; Tj =25 °C
200
240
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C2
−4
V
Tj = 150 °C
1.2
−−
V
Tj = −55 °C
−−
6V
IDSS
drain-source leakage current
VDS = 160 V; VGS =0V; Tj =25 °C
−−
1
µA
VDS = 200 V; VGS =0V; Tj = 150 °C
−−
0.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
−−
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 2.5 A; Figure 7 and 8
Tj =25 °C
130
165
m
Tj = 150 °C
325
413
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID = 2.9 A; Figure 11
10
S
Qg(tot)
total gate charge
ID = 3 A; VDD = 100 V; VGS =10V; Figure 14
40
nC
Qgs
gate-source charge
4.5
nC
Qgd
gate-drain (Miller) charge
12
16.5
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 12
1330
pF
Coss
output capacitance
140
pF
Crss
reverse transfer capacitance
70
pF
td(on)
turn-on delay time
VDD = 100 V; RD = 100 Ω;
VGS =10V;RG =6 Ω
12
25
ns
tr
rise time
11
25
ns
td(off)
turn-off delay time
50
80
ns
tf
fall time
25
40
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3 A; VGS =0V; Figure 13
0.7
1.1
V
trr
reverse recovery time
IS = 2.9 A; dIS/dt = −100 A/µs; VGS =0V
105
ns
Qr
recovery charge
0.45
−µC


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