August 1999

2

Rev 1.000

Philips Semiconductors

Product specification

PSMN130-200D

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Very low on-state resistance

V

• Fast switching

• Low thermal resistance

I

R

GENERAL DESCRIPTION

PINNING

SOT428 (DPAK)

SiliconMAX products use the latest

PIN

DESCRIPTION

Philips

Trench

technology

to

achieve

the

lowest

possible

1

gate

on-state

resistance

in

each

package at each voltage rating.

2

drain

1

Applications:-

3

source

• d.c. to d.c. converters

• switched mode power supplies

tab

drain

The PSMN130-200D is supplied in

the

SOT428

(Dpak)

surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

-

200

V

V

DGR

Drain-gate voltage

T

-

200

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

-

20

A

T

-

14

A

I

DM

Pulsed drain current

T

-

80

A

P

D

Total power dissipation

T

-

150

W

T

Operating junction and

- 55

175

˚C

storage temperature

d

g

s

1

2

3

tab

1 It is not possible to make connection to pin 2 of the SOT428 package.