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PSMN005-55P Datasheet(PDF) 6 Page - NXP Semiconductors

Part # PSMN005-55P
Description  N-channel logic level TrenchMOS transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN005-55P Datasheet(HTML) 6 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
™ transistor
PSMN005-55B, PSMN005-55P
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
25
50
75
100
125
150
175
200
225
250
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 75 A
Tj = 25 C
VDD = 11 V
VDD = 44 V
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
October 1999
6
Rev 1.200


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