MH32D72AKLB-75 datasheet(16/40 Pages) MITSUBISHI | 2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

Part No.	MH32D72AKLB-75

Description	2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

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MITSUBISHI LSIs

MITSUBISHI ELECTRIC

MH32D72AKLB-75,-10

2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module

MIT-DS-0399-0.2

21.Mar.2001

Preliminary Spec.

Some contents are subject to change without notice.

16

ABSOLUTE M AXIMUM RATINGS

DC OPERATING CONDITIONS

(Ta=0 ~ 70°C

, unless otherwise noted)

CAPACITANCE

(Ta=0 ~ 70°C

, Vdd = VddQ = 2.5 ± 0.2V, Vss = Vss Q = 0V, unless otherwise noted)

Symbol

Parameter

Conditions

Ratings

Unit

Vdd

Supply Voltage

with respect to Vss

-0.5 ~ 3.7

V

VddQ

Supply Voltage for Output

with respect to VssQ

-0.5 ~ 3.7

V

VI

Input Voltage

with respect to Vss

-0.5 ~ Vdd+0.5

V

VO

Output Voltage

with respect to VssQ

-0.5 ~ VddQ+0.5

V

IO

Output Current

50

mA

Pd

Power Dissipation

Ta = 25°C

W

Topr

Operating Temperature

0 ~ 70

Tstg

Storage Temperature

-40 ~ 100

Symbol

Parameter

Limits

Unit

Min.

Typ.

Max.

Vdd/VddQ

Supply Voltage

2.3

2.5

2.7

V

VIH(DC)

High-Level Input Voltage

Vref + 0.18

VddQ+0.3

V

VIL(DC)

Low-Level Input Voltage

-0.3

Vref - 0.18

V

Vref

Input Reference Voltage

1.15

1.35

V

1.25

VIN(DC)

Input Voltage Level, CK0 and /CK0

-0.3

VddQ + 0.3

V

VID(DC) Input Differential Voltage, CK0 and /CK0

0.36

VddQ + 0.6

V

VTT

I/O Termination Voltage

Vref - 0.04

V

Vref + 0.04

Notes

Symbol

CI(A)

CI(C)

CI(K)

CI/O

Parameter

Input Capacitance, address pin

Input Capacitance, control pin

Input Capacitance, CK0 pin

Input Capacitance, I/O pin

Tes t Condition

Limits(max.)

Unit

VI - 1.25V

f =100MHz

VI = 25mVrm

pF

11.0

38.0

22.0

20

Notes

11

11.0

6

5

7

°C

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