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MH32D72AKLB-75 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor

Part No. MH32D72AKLB-75
Description  2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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MH32D72AKLB-75 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH32D72AKLB-75,-10
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0399-0.2
21.Mar.2001
Preliminary Spec.
Some contents are subject to change without notice.
6
COMM AND TRUTH TABLE
H=High Level, L=Low Level, V=Valid, X=Don't Care, n=CLK cycle number
COMMAND
MNEMONIC
CKE0
n-1
CKE0
n
/S
/RAS
/CAS
/WE
BA0,1
A10
/AP
A0-9,
11
Deselect
DESEL
H
X
H
X
X
X
X
X
X
No Operation
NOP
H
X
L
H
H
H
X
X
X
Row Address Entry &
Bank Activate
ACT
H
X
L
L
H
H
V
V
V
Single Bank Precharge
PRE
H
X
L
L
H
L
V
L
X
Precharge All Banks
PREA
H
X
L
L
H
L
H
X
Column Address Entry
& Write
WRITE
H
X
L
H
L
L
V
L
V
Column Address Entry
& Write with
Auto-Precharge
WRITEA
H
X
L
H
L
L
V
H
V
Column Address Entry
& Read
READ
H
X
L
H
L
H
V
L
V
Column Address Entry
& Read with
Auto-Precharge
READA
H
X
L
H
L
H
V
H
V
Auto-Refresh
REFA
H
H
L
L
L
H
X
X
X
Self-Refresh Entry
REFS
H
L
L
L
L
H
X
X
X
Self-Refresh Exit
REFSX
L
H
H
X
X
X
X
X
X
L
H
L
H
H
H
X
X
X
Burst Terminate
TERM
H
X
L
H
H
L
X
X
X
Mode Register Set
MRS
H
X
L
L
L
L
L
L
V
X
note
1
NOTE:
1. Applies only to read bursts with autoprecharge disabled; this command is undefined (and should
not be used) for read bursts with autoprecharge enabled, and for write bursts.
2. BA0-BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode
Register; BA0 = 1, BA1 = 0 selects Extended Mode Register; other combinations of BA0-BA1 are
reserved; A0-A11 provide the op-code to be written to the selected Mode Register.
2


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