PN4392 datasheet(3/6 Pages) PHILIPS

Part #	PN4392

Description	N-channel silicon field-effect transistors

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 6 page

April 1989

3

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

PN4391 to 4393

THERMAL RESISTANCE

STATIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

From junction to ambient in free air

Rth j-a

=

350

K/W

PN4391

PN4392

PN4393

Reverse gate current

−V

GS = 20 V; VDS =0

−IGSS

max.

1.0

1.0 nA

−VGS = 20 V; VDS =0

Tamb = 100 °C

−IGSS

max.

200

200 nA

Drain cut-off current

−VGS = 12 V

VDS = 20 V

IDSX

max.

1.0

nA

−V

GS =7 V

IDSX

max.

1.0

nA

−V

GS =5 V

IDSX

max.

1.0 nA

−VGS = 12 V

VDS = 20 V;

Tamb = 100 °C

IDSX

max.

200

nA

−V

GS =7 V

IDSX

max.

200

nA

−V

GS =5 V

IDSX

max.

200 nA

Drain saturation current

VDS = 20 V; VGS =0

IDSS

min.

50

25

5 mA

max.

150

100

60 mA

Gate-source breakdown voltage

−I

G =1 µA; VDS =0

−V(BR)GSS

min.

40

40 V

Gate-source cut-off voltage

VDS = 20 V; ID =1nA

−VGS off

min.

4.0

2.0

0.5 V

max.

10

5.0

3.0 V

Drain-source on-resistance

ID = 1 mA; VGS =0

RDS on

max.

30

60

100

Ω

Drain-source on-voltage

VGS = 0; ID = 12 mA

VDS on

max.

0.4

V

VGS = 0; ID = 6 mA

VDS on

max.

0.4

V

VGS = 0; ID = 3 mA

VDS on

max.

0.4 V

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