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PMBZ5254B Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMBZ5254B Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page  Notes 1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 × 10 × 0.7 mm. 2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ =IZtest. SZ values valid between 25 °C and 125 °C. PMBZ5252B 24 600 +0.081 5.2 55 0.1 18 1.25 PMBZ5253B 25 600 +0.082 5.0 55 0.1 19 1.25 PMBZ5254B 27 600 +0.085 4.6 50 0.1 21 1.0 PMBZ5255B 28 600 +0.085 4.5 50 0.1 21 1.0 PMBZ5256B 30 600 +0.085 4.2 50 0.1 23 1.0 PMBZ5257B 33 700 +0.085 3.8 45 0.1 25 0.9 TYPE No. WORKING VOLTAGE VZ (V)(1) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ = 0.25 mA TEMP. COEFF. SZ (%/K) at IZ(2) TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; at VR =0V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb =25 °C IR (µA) VR (V) NOM. MAX. TYP. MAX. MAX. MAX. |
Similar Part No. - PMBZ5254B |
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Similar Description - PMBZ5254B |
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