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PN3439 Datasheet(PDF) 4 Page - NXP Semiconductors

Part No. PN3439
Description  NPN high-voltage transistors
Download  8 Pages
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Maker  PHILIPS [NXP Semiconductors]
Homepage  http://www.nxp.com
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PN3439 Datasheet(HTML) 4 Page - NXP Semiconductors

   
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1997 Sep 04
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
PN3439; PN3440
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 360 V
PN3439
100
nA
ICBO
collector cut-off current
IE = 0; VCB = 250 V
PN3440
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 2 mA; VCE =10V
PN3439
30
hFE
DC current gain
IC = 20 mA; VCE =10V
PN3440
40
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB =4mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 50 mA; IB =4mA
1.3
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2pF
Ce
emitter capacitance
IC =ic = 0; VEB = 5 V; f = 1 MHz
20
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
70
MHz


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