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MH32D72AKLA-10 Datasheet(PDF) 19 Page - Mitsubishi Electric Semiconductor

Part No. MH32D72AKLA-10
Description  2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

MH32D72AKLA-10 Datasheet(HTML) 19 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH32D72AKLA-10,-75
2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0398-1.1
24.Nov.2000
Preliminary Spec.
Some contents are subject to change without notice.
19
18
17
15.6
15.6
1
1
1
1
200
200
80
75
1
1
15
15
15
15
20
20
20
20
80
75
70
65
120,000
50
120,000
45
us
tCK
tCK
tCK
ns
tCK
ns
ns
ns
ns
ns
Average Periodic Refresh interval
tREFI
Exit Power down to -Read command
tXPRD
Exit Power down to command
tXPNR
tXSRD
Exit Self Ref. to -Read command
tXSNR
Exit Self Ref. to non-Read command
tWTR
Internal Write to Read Command Delay
ns
35
35
Auto Precharge write recovery + precharge time
tDAL
-10
-75
AC Characteristics
Max.
Min.
Max.
Min.
Parameter
tWR
Write Recovery time
tRRD
Act to Act Delay time
Row Precharge time
Row to Column Delay
tRP
tRCD
tRFC
Auto Ref. to Active/Auto Ref. command period
ns
Row Cycle time(operation)
tRC
Row Active time
ns
tRAS
Notes
Unit
Symbol
Output Load Condition
(f or component measurement)
DQ
Output Timing
Measurement
Reference
Point
VREF
VREF
DQS
VOUT
VREF
30pF
50ohm
VTT=V REF
Zo=50 ohm
VTT=V REF
50 ohm
25 ohm
10cm
AC TIMING REQUIREMENTS(Continues)
(Ta=0 ~ 70
, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)
C
O


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