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MH32D72AKLA-10 Datasheet(PDF) 30 Page - Mitsubishi Electric Semiconductor |
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MH32D72AKLA-10 Datasheet(HTML) 30 Page - Mitsubishi Electric Semiconductor |
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30 / 38 page  MITSUBISHI LSIs MITSUBISHI ELECTRIC MH32D72AKLA-10,-75 2,415,919,104-BIT (33,554,432-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module MIT-DS-0398-1.1 24.Nov.2000 Preliminary Spec. Some contents are subject to change without notice. 30 Write Interrupted by Write (BL=8) Command A0-9,11 A10 BA0,1 WRITE Yi 0 00 WRITE Yk 0 10 WRITE Yj 0 00 WRITE Yl 0 00 [Write interrupted by Write] Burst write operation can be interrupted by write of any bank. Random column access is allowed. WRITE to WRITE interval is minimum 1 CLK. DQ Dai1 Daj1 Daj3 Dak1 Dak3 Dak5 Dal1 DQS Dal2 Dal3 Dal5 Dal6 Dal7 Dal4 Dal0 Dak4 Dak2 Dak0 Dai0 Daj0 Daj2 /CLK CLK Module input and output timing. |
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