MH32D64KQH-75 datasheet(19/40 Pages) MITSUBISHI

Part #	MH32D64KQH-75

Description	2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

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19 / 40 page

MH32D64KQH-75,-10

2,147,483,648-BIT (33,554,432-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module

MIT-DS-0417-0.2

17.May.2001

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MITSUBISHI

ELECTRIC

19

18

17

7.8

1

200

80

75

1

15

20

80

75

70

65

120,000

50

120,000

45

us

tCK

ns

tCK

ns

Average Periodic Refresh interval

tREFI

Exit Power down to -Read command

tXPRD

Exit Power down to command

tXPNR

tXSRD

Exit Self Ref. to -Read command

tXSNR

Exit Self Ref. to non-Read command

tWTR

Internal Write to Read Command Delay

ns

35

Auto Precharge write recovery + precharge time

tDAL

-10

-75

AC Characteristics

Max.

Min.

Max.

Min.

Parameter

tWR

Write Recovery time

tRRD

Act to Act Delay time

Row Precharge time

Row to Column Delay

tRP

tRCD

tRFC

Auto Ref. to Active/Auto Ref. command period

ns

Row Cycle time(operation)

tRC

Row Active time

ns

tRAS

Notes

Unit

Symbol

Output Load Condition

(f or component measurement)

DQ

Output Timing

Measurement

Reference

Point

VREF

DQS

VOU

VREF

30pF

50ohm

VTT =V REF

Zo=50 ohm

AC TIMING REQUIREMENTS(Continues)

(Ta=0 ~ 70°C

, Vdd = VddQ = 2.5 ± 0.2V, Vss = VssQ = 0V, unless otherwise noted)

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MH32D64KQH-75 Datasheet(PDF) 19 Page - Mitsubishi Electric Semiconductor

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