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CM350DU-5F Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. CM350DU-5F
Description  HIGH POWER SWITCHING USE INSULATED TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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CM350DU-5F Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor

   
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Sep.1998
Dimensions
Inches
Millimeters
A
4.33
110.0
B
3.66
±0.01
93.0
±0.25
C
3.15
80.0
D
2.44
±0.01
62.0
±0.25
E
0.55
14.0
F
0.86
21.75
G
0.94
24.0
H
0.24
6.0
Dimensions
Inches
Millimeters
J
0.59
15.0
K
0.26 Dia.
6.5 Dia.
L
1.14 +0.04/-0.02
29 +1.0/-0.5
M
0.71
18.0
N
0.33
8.5
P
0.28
7.0
Q
0.83
21.0
R
0.98
25.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching appli-
cations. Each module consists of
two IGBTs in a half-bridge configu-
ration with each transistor having
a reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
UPS
Forklift
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM350DU-5F is a
250V (VCES), 350 Ampere Trench
Gate Design Dual IGBT Module.
Current Rating
VCES
Type
Amperes
Volts (x 50)
CM
350
5
MITSUBISHI IGBT MODULES
CM350DU-5F
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
CM
A
C
D
F
B
E
TC Measured
Point
R
3 - M6 NUTS
R
G
L
N
M
Q
E2
G1
E1
G2
E2
C1
C2E1
MP
P
M
K(4 - Mounting
Holes)
TAB #110, t = 0.5
J
H
H


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