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NE34018-A Datasheet(PDF) 1 Page - California Eastern Labs |
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NE34018-A Datasheet(HTML) 1 Page - California Eastern Labs |
1 / 10 page PART NUMBER NE34018 PACKAGE OUTLINE 18 SYMBOL PARAMETERS AND CONDITIONS UNITS MIN TYP MAX NF Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz dB 0.6 1.0 GA Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz dB 14.0 16.0 P1dB Output Power at 1 dB Gain Compression Point, f = 2 GHz VDS = 2 V, IDS = 10 mA dBm 12 VDS = 3 V, IDS = 30 mA dBm 16.5 G1dB Gain at P1dB, f = 2 GHz VDS = 2 V, IDS = 10 mA dB 17.0 VDS = 3 V, IDS = 30 mA dB 17.5 O/P IP3 Output IP3 at f = 2 GHz, ∆f = 1 MHz VDS = 2 V, IDS = 10 mA dBm 23 VDS = 2 V, IDS = 30 mA dBm 32 IDSS Saturated Drain Current at VDS = 2 V, VGS = 0 V mA 30 80 120 VP Pinch Off Voltage at VDS = 2 V, ID = 100 µA V -2.0 -0.8 -0.2 gm Transconductance at VDS = 2 V, ID = 5 mA mS 30 IGSO Gate to Source Leakage Current at VGS = -3 V µA 0.5 10 RTH(CH-A) Thermal Resistance (Channel to Ambient) ˚C/W 833 NE34018 FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz • HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz •LG = 0.6 µ µ µ µ µm, WG = 400 µ µ µ µ µm • TAPE & REEL PACKAGING NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA California Eastern Laboratories GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) ELECTRICAL CHARACTERISTICS (TA = 25°C) Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. DESCRIPTION NEC's NE34018 is a low cost gallium arsenide Hetero-Junc- tion FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implanta- tion for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise amplifier transistor in the 1- 3 GHz frequency range. The NE34018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications. NEC's stringent quality assurance and test procedures en- sure the highest reliability and performance. Frequency, f (GHz) 18 Package SOT-343 Style 0.5 1 2 3 4 5 6 7 8 910 4 3 2 1 0 25 20 15 10 5 0 GA NF 0.5 1 2 3 4 5 6 7 8 910 4 3 2 1 0 25 20 15 10 5 0 |
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