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FP1189-G Datasheet(PDF) 1 Page - WJ Communication. Inc. |
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FP1189-G Datasheet(HTML) 1 Page - WJ Communication. Inc. |
1 / 11 page Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 11 October 2006 FP1189 ½-Watt HFET Product Information The Communications Edge TM Product Features • 50 – 4000 MHz • +27 dBm P1dB • +40 dBm Output IP3 • High Drain Efficiency • 20.5 dB Gain @ 900 MHz • Lead-free/Green/RoHS- compliant SOT-89 Package • MTTF >100 Years Applications • Mobile Infrastructure • CATV / DBS • W-LAN / ISM • RFID • Defense / Homeland Security • Fixed Wireless Product Description The FP1189 is a high performance ½-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally- friendly lead-free/green/RoHS-compliant and green SOT- 89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram Function Pin No. Input / Gate 1 Output / Drain 3 Ground 2, 4 Specifications DC Parameter Units Min Typ Max Saturated Drain Current, Idss (1) mA 220 290 360 Transconductance, Gm mS 155 Pinch Off Voltage, Vp (2) V -2.1 RF Parameter (3) Units Min Typ Max Operational Bandwidth MHz 50 4000 Test Frequency MHz 800 Small Signal Gain dB 20.5 SS Gain (50 Ω, unmatched) dB 17 21 Maximum Stable Gain dB 24 Output P1dB dBm +27.4 Output IP3 (4) dBm +40 Noise Figure dB 2.7 Drain Bias +8 V @ 125 mA 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 1.2 mA. 3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 125 mA, in a tuned application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 4. 3OIP measured with two tones at an output power of +12 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C DC Power 2.0 W RF Input Power (continuous) 6 dB above Input P1dB Drain to Gate Voltage, Vdg +16 V Junction Temperature +220 °C Operation of this device above any of these parameters may cause permanent damage. Typical Performance (5) Parameter Units Typical Frequency MHz 915 1960 2140 2450 Gain dB 20.6 15.7 14.7 13.2 Input Return Loss dB 13 26 24 36 Output Return Loss dB 6.0 9.6 9.0 7.6 Output P1dB dBm +27.4 +27.2 +27.2 +28.1 Output IP3 (4) dBm +39.9 +40.4 +39.7 +40.0 Noise Figure dB 2.7 3.7 4.3 IS-95 Channel Power @ -45 dBc ACPR dBm +21 +20.8 W-CDMA Ch. Power @ -45 dBc ACLR +18.4 Drain Voltage V +8 Drain Current mA 125 5. Typical parameters represent performance in a tuned application circuit. Ordering Information Part No. Description FP1189-G ½ -Watt HFET (lead-free/green/RoHS-compliant SOT-89 package) FP1189-PCB900S 870 – 960 MHz Application Circuit FP1189-PCB1900S 1930 – 1990 MHz Application Circuit FP1189-PCB2140S 2110 – 2170 MHz Application Circuit RF IN GND RF OUT GND 1 2 3 4 |
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Similar Description - FP1189-G |
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