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S29WS064J0SBAW01 Datasheet(PDF) 1 Page - SPANSION |
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S29WS064J0SBAW01 Datasheet(HTML) 1 Page - SPANSION |
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1 / 97 page  This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion LLC deems the products to have been in sufficient production volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid combinations offered may occur. Publication Number S29WS-J_00 Revision A Amendment 6 Issue Date May 11, 2006 Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.65 to 1.95 volt) Manufactured on 0.11 µm process technology Simultaneous Read/Write operation — Data can be continuously read from one bank while executing erase/program functions in other bank — Zero latency between read and write operations — Four bank architecture: WS128J: 16Mb/48Mb/48Mb/ 16Mb, WS064J: 8Mb/24Mb/24Mb/8Mb Programable Burst Interface — 2 Modes of Burst Read Operation — Linear Burst: 8, 16, and 32 words with wrap-around — Continuous Sequential Burst Secured Silicon Sector region — 128 words accessible through a command sequence, 64words for the Factory Secured Silicon Sector and 64words for the Customer Secured Silicon Sector. Sector Architecture 4 Kword x 16 boot sectors, eight at the top of the address range, and eight at the bottom of the address range — WS128J: 4 Kword X 16, 32 Kword x 254 sectors Bank A : 4 Kword x 8, 32 Kword x 31 sectors Bank B : 32 Kword x 96 sectors Bank C : 32 Kword x 96 sectors Bank D : 4 Kword x 8, 32 Kword x 31 sectors — WS064J: 4 Kword x 16, 32 Kword x 126 sectors. Bank A : 4 Kword x 8, 32 Kword x 15 sectors Bank B : 32 Kword x 48 sectors Bank C : 32 Kword x 48 sectors Bank D : 4 Kword x 8, 32 Kword x 15 sectors WS128J : 84-ball (8 mm x 11.6 mm) FBGA package, WS064J : 80-ball (7 mm x 9 mm) FBGA package Cyclling Endurance : 1,000,000 cycles per sector typical Data retention : 20-years typical Performance Characteristics Read access times at 80/66 MHz — Synchronous latency of 71/56 ns (at 30 pF) — Asynchronous random access times of 55/55 ns (at 30 pF) Power dissipation (typical values, CL = 30 pF) — Burst Mode Read: 18 mA @ 80Mhz — Simultaneous Operation: 60 mA @ 80Mhz — Program/Erase: 15 mA — Standby mode: 0.2 µA Hardware Features Handshaking feature available — Provides host system with minimum possible latency by monitoring RDY Hardware reset input (RESET#) — Hardware method to reset the device for reading array data WP# input — Write protect (WP#) function allows protection of four outermost boot sectors, regardless of sector protect status Persistent Sector Protection — A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector — Sectors can be locked and unlocked in-system at VCC level Password Sector Protection — A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-defined 64-bit password ACC input: Acceleration function reduces programming time; all sectors locked when ACC = VIL CMOS compatible inputs, CMOS compatible outputs Low VCC write inhibit Software Features Supports Common Flash Memory Interface (CFI) Software command set compatible with JEDEC 42.4 standards — Backwards compatible with Am29BDS, Am29BDD, Am29BL, and MBM29BS families Data# Polling and toggle bits — Provides a software method of detecting program and erase operation completion Erase Suspend/Resume — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences S29WS128J/064J 128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet |
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