MBM29DL16XTE70 datasheet(1/76 Pages) SPANSION

Part #	MBM29DL16XTE70

Description	FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation

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DS05-20880-4E

FUJITSU SEMICONDUCTOR

DATA SHEET

FLASH MEMORY

CMOS

16M (2M

× 8/1M × 16) BIT Dual Operation

MBM29DL16XTE/BE70/90

s FEATURES

• 0.23

µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes

(Refer to “MBM29DL16XTE/BE Device Bank Divisions Table” in sGENERAL DESCRIPTION)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

(Continued)

s PRODUCT LINE UP

s PACKAGES

Part No.

MBM29DL16XTE/BE70

MBM29DL16XTE/BE90

Address Access Time (Max)

70 ns

90 ns

CE Access Time (Max)

70 ns

90 ns

OE Access Time (Max)

30 ns

35 ns

Power Supply Voltage

3.0 V +0.6V

−0.3V

48-pin plastic TSOP (1)

(FPT-48P-M19)

48-pin plastic TSOP (1)

(FPT-48P-M20)

48-pin plastic FBGA

(BGA-48P-M11)

Marking Side

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MBM29DL16XTE70 Datasheet(PDF) 1 Page - SPANSION

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