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NE856M02 Datasheet(PDF) 6 Page - California Eastern Labs

Part No. NE856M02
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
Logo CEL - California Eastern Labs

NE856M02 Datasheet(HTML) 6 Page - California Eastern Labs

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NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE856M02
VCE = 10 V, IC = 20 mA
FREQUENCY
S11
S21
S12
S22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.508
-78.9
29.606
131.4
0.019
57.0
0.707
-34.0
0.43
32.0
0.200
0.425
-120.5
18.715
110.2
0.029
57.5
0.500
-42.7
0.65
28.1
0.400
0.384
-156.2
10.140
92.5
0.043
62.1
0.373
-45.9
0.91
23.7
0.600
0.376
-173.7
6.875
82.6
0.058
64.6
0.347
-48.9
1.01
20.0
0.800
0.374
174.4
5.192
75.0
0.074
65.4
0.346
-53.4
1.05
17.1
1.000
0.374
164.9
4.168
68.3
0.090
65.3
0.356
-58.2
1.07
15.0
1.200
0.375
156.8
3.481
62.2
0.106
64.5
0.370
-63.0
1.07
13.5
1.400
0.375
149.5
2.990
56.6
0.122
63.4
0.387
-67.7
1.07
12.3
1.600
0.375
142.7
2.620
51.2
0.137
61.9
0.406
-71.9
1.06
11.3
1.800
0.376
136.2
2.337
46.1
0.153
60.3
0.424
-75.9
1.05
10.4
2.000
0.377
130.1
2.109
41.2
0.168
58.6
0.443
-79.4
1.04
9.7
2.200
0.378
123.9
1.922
36.5
0.183
56.8
0.461
-82.9
1.03
9.2
2.400
0.380
118.2
1.770
32.1
0.198
54.8
0.478
-85.9
1.01
8.9
2.600
0.382
112.6
1.640
27.8
0.213
53.2
0.494
-88.8
0.99
8.9
2.800
0.385
107.0
1.531
23.7
0.227
51.1
0.508
-91.7
0.98
8.3
3.000
0.388
101.4
1.435
19.8
0.242
49.1
0.521
-94.5
0.97
7.7
0
j10
j25
j50
j100
-j10
-j25
-j50
-j100
S22
3 GHz
S22
0.1 GHz
S11
3 GHz
S11
0.1 GHz
90˚
270˚
180˚
225˚
315˚
135˚
45˚
S21
3 GHz
S21
0.1 GHz
S12
3 GHz
S12
0.1 GHz
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S21|
|S12|
K - 1
).
2
(K ±
∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S21|
|S12|
, K = 1 + | ∆ | - |S
11
| - |S22|
2
2
2
2 |S12 S21|
,
Coordinates in Ohms
Frequency in GHz
VCE = 10 V, IC = 20 mA


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