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NE856M02 Datasheet(PDF) 5 Page - California Eastern Labs

Part No. NE856M02
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
Logo CEL - California Eastern Labs

NE856M02 Datasheet(HTML) 5 Page - California Eastern Labs

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NE856M02
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE856M02
VCE = 5 V, IC = 20 mA
FREQUENCY
S11
S21
S12
S22
K
MAG
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.481
-88.5
28.679
129.0
0.023
57.9
0.664
-41.3
0.42
31.0
0.200
0.434
-130.1
17.703
108.4
0.031
56.9
0.445
-52.9
0.68
27.5
0.400
0.414
-162.4
9.494
91.4
0.048
62.0
0.311
-58.6
0.92
22.9
0.600
0.411
-178.1
6.428
81.9
0.066
64.1
0.280
-62.1
1.02
19.1
0.800
0.410
171.0
4.855
74.4
0.084
65.0
0.280
-66.4
1.05
16.2
1.000
0.410
162.2
3.900
67.9
0.101
64.4
0.290
-70.7
1.07
14.2
1.200
0.409
154.5
3.265
61.9
0.120
63.2
0.305
-74.9
1.07
12.7
1.400
0.409
147.5
2.810
56.3
0.137
61.8
0.323
-79.0
1.07
11.4
1.600
0.408
140.9
2.471
51.0
0.154
60.0
0.343
-82.5
1.07
10.4
1.800
0.407
134.6
2.208
45.9
0.172
58.2
0.362
-85.9
1.06
9.6
2.000
0.406
128.6
2.000
41.1
0.188
56.2
0.381
-88.8
1.05
8.9
2.200
0.406
122.7
1.829
36.4
0.205
54.1
0.399
-91.7
1.04
8.3
2.400
0.406
117.0
1.689
32.0
0.222
52.0
0.416
-94.4
1.03
7.8
2.600
0.406
111.4
1.571
27.7
0.238
49.8
0.431
-96.9
1.02
7.4
2.800
0.408
105.9
1.471
23.7
0.253
47.6
0.445
-99.4
1.01
7.1
3.000
0.409
100.4
1.384
19.7
0.268
45.3
0.457
-101.9
1.00
7.1
0
j10
j25
j50
j100
-j10
-j25
-j50
-j100
S22
3 GHz
S22
0.1 GHz
S11
3 GHz
S11
0.1 GHz
90˚
270˚
180˚
225˚
315˚
135˚
45˚
S21
3 GHz
S21
0.1 GHz
S12
3 GHz
S12
0.1 GHz
Note:
1. Gain Calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S21|
|S12|
K - 1
).
2
(K ±
∆ = S11 S22 - S21 S12
When K ≤ 1, MAG is undefined and MSG values are used. MSG =
|S21|
|S12|
, K = 1 + | ∆ | - |S
11
| - |S22|
2
2
2
2 |S12 S21|
,
Coordinates in Ohms
Frequency in GHz
VCE = 5 V, IC = 20 mA


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