NE856M02 datasheet(4/8 Pages) CEL

Part #	NE856M02

Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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Manufacturer	CEL [California Eastern Labs]

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NE856M02

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)

NE856M02

VCE = 3 V, IC = 10 mA

FREQUENCY

S11

S21

S12

S22

K

MAG

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

(dB)

0.100

0.626

-67.5

20.474

137.7

0.031

60.2

0.766

-36.6

0.26

28.2

0.200

0.535

-110.6

14.152

115.2

0.044

50.4

0.541

-52.5

0.47

25.1

0.400

0.479

-149.7

7.982

94.8

0.059

50.0

0.366

-63.4

0.77

21.3

0.600

0.465

-168.7

5.464

83.6

0.073

53.3

0.316

-68.4

0.94

18.7

0.800

0.461

178.6

4.146

75.2

0.089

55.6

0.306

-72.9

1.03

15.7

1.000

0.459

168.7

3.339

68.0

0.104

56.7

0.311

-77.1

1.08

13.3

1.200

0.458

160.4

2.800

61.5

0.121

56.9

0.323

-81.0

1.10

11.7

1.400

0.458

152.9

2.415

55.5

0.138

56.7

0.340

-84.8

1.11

10.5

1.600

0.457

146.0

2.127

49.9

0.155

55.8

0.358

-88.1

1.10

9.4

1.800

0.458

139.5

1.905

44.6

0.171

54.8

0.376

-91.4

1.10

8.6

2.000

0.457

133.2

1.728

39.5

0.188

53.5

0.394

-94.3

1.08

7.9

2.200

0.457

127.0

1.582

34.7

0.205

51.9

0.412

-97.1

1.07

7.2

2.400

0.458

121.2

1.464

30.2

0.222

50.2

0.428

-99.7

1.05

6.8

2.600

0.459

115.4

1.363

26.0

0.239

48.6

0.442

-102.2

1.04

6.3

2.800

0.460

109.7

1.278

21.9

0.256

46.6

0.455

-104.8

1.02

6.0

3.000

0.462

103.9

1.204

17.9

0.272

44.5

0.466

-107.4

1.01

5.7

0

j10

j25

j50

j100

-j10

-j25

-j50

-j100

S22

3 GHz

S22

0.1 GHz

S11

3 GHz

S11

0.1 GHz

90˚

270˚

180˚

225˚

315˚

135˚

45˚

S21

3 GHz

S21

0.1 GHz

S12

3 GHz

S12

0.1 GHz

0˚

Note:

1. Gain Calculation:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

MAG =

|S21|

|S12|

K - 1

).

2

(K ±

∆ = S11 S22 - S21 S12

When K ≤ 1, MAG is undefined and MSG values are used. MSG =

|S21|

|S12|

, K = 1 + | ∆ | - |S

11

| - |S22|

2

2 |S12 S21|

,

Coordinates in Ohms

Frequency in GHz

VCE = 3 V, IC = 10 mA

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