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NE856M02 Datasheet(PDF) 3 Page - California Eastern Labs

Part No. NE856M02
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
Logo CEL - California Eastern Labs

NE856M02 Datasheet(HTML) 3 Page - California Eastern Labs

  NE856M02 Datasheet HTML 1Page - California Eastern Labs NE856M02 Datasheet HTML 2Page - California Eastern Labs NE856M02 Datasheet HTML 3Page - California Eastern Labs NE856M02 Datasheet HTML 4Page - California Eastern Labs NE856M02 Datasheet HTML 5Page - California Eastern Labs NE856M02 Datasheet HTML 6Page - California Eastern Labs NE856M02 Datasheet HTML 7Page - California Eastern Labs NE856M02 Datasheet HTML 8Page - California Eastern Labs  
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NE856M02
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Collector Current, Ic (mA)
Frequency, f (GHz)
Collector Current, Ic (mA)
Collector Current, IC (mA)
GAIN BAND WIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN AND MAXIMUM
GAIN vs. FREQUENCY
INTERMODULATION DISTORTION vs.
COLLECTOR CURRENT
NOISE FIGURE vs.
COLLECTOR CURRENT
VCE = 10 V
f = 1 GHz
10
5
3
2
1
0.5
0.3
13
5
10
20
30
50
20
10
0
0.2
0.4
0.6
0.8 1.0 1.4
2.0
VCE = 10 V
Ic = 20 mA
MAG
|S21E|
2
7
6
5
4
3
2
1
0
0.5
1
5
10
50
VCE = 10 V
f = 1 GHz
-80
-70
-60
-50
-40
-30
20
30
40
50
60
70
VCE = 10 V
VO = 100 dBµ V/50 Ω
Rg = Re 50 Ω
IM
f = 90 + 100 MHz
{
at
2
IM
f = 2 x 200 - 190 MHz
3
IM3
IM2


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