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NE856M02 Datasheet(PDF) 2 Page - California Eastern Labs

Part No. NE856M02
Description  NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
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Maker  CEL [California Eastern Labs]
Homepage  http://www.cel.com
Logo CEL - California Eastern Labs

NE856M02 Datasheet(HTML) 2 Page - California Eastern Labs

  NE856M02 Datasheet HTML 1Page - California Eastern Labs NE856M02 Datasheet HTML 2Page - California Eastern Labs NE856M02 Datasheet HTML 3Page - California Eastern Labs NE856M02 Datasheet HTML 4Page - California Eastern Labs NE856M02 Datasheet HTML 5Page - California Eastern Labs NE856M02 Datasheet HTML 6Page - California Eastern Labs NE856M02 Datasheet HTML 7Page - California Eastern Labs NE856M02 Datasheet HTML 8Page - California Eastern Labs  
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NE856M02
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
Collector to Base Voltage
V
20
VCEO
Collector to Emitter Voltage
V
12
VEBO
Emitter to Base Voltage
V
3.0
IC
Collector Current
mA
100
PT
Total Power Dissipation2
W
1.2
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Device mounted on 0.7 mm X 16 cm2 double-sided ceramic
substrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA = 25°C)
Ambient Temperature, TA (°C)
Collector to Base Voltage, VCB (V)
Collector Current, Ic (mA)
Collector Current, IC (mA)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
INSERTION GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
2.0
1.0
0
50
100
150
Free Air
RTH (J-A) 312.5 °CW
Ceramic Substrate
16 cm x 0.7 mm
2
f = 1.0 MHz
5.0
3.0
2.0
1.0
0.5
0.8
13
5
10
20
30
VCE = 10 V
200
100
50
20
10
0.5
1
5
10
50
15
10
5
0
1
3
5
10
20 30
50
100
VCE = 10 V
f = 1 GHz
PART NUMBER
QUANTITY
PACKAGING
NE856M02-T1-AZ
1000
Tape & Reel
ORDERING INFORMATION


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