1999 Apr 22

2

Philips Semiconductors

Product specification

NPN general purpose transistor

PMBS3904

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• General purpose switching and amplification, e.g.

telephony and professional communication equipment.

DESCRIPTION

NPN transistor in a plastic SOT23 package.

PNP complement: PMBS3906.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

PMBS3904

∗O4

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM255

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

60

V

collector-emitter voltage

open base

−

40

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C