1996 Sep 11

9

Philips Semiconductors

Product specification

N-channel silicon field-effect transistors

PMBFJ308; PMBFJ309;

PMBFJ310

Fig.16 Gate current as a function of drain-gate voltage; typical values.

handbook, full pagewidth

02

IG

(pA)

4

6

8

10

12

14

VDG (V)

16

−10

−1

MCD230

ID = 10 mA

1 mA

100

µA

IGSS

Fig.17 Gate current as a function of junction temperature; typical values.

handbook, full pagewidth

−25

0

IGSS

(pA)

25

50

75

100

125

150

Tj (

175

10

1

MCD231