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PMBFJ210 Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMBFJ210 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page 1997 Dec 01 5 Philips Semiconductors Product specification N-channel field-effect transistors PMBFJ210; PMBFJ211; PMBFJ212 Fig.2 Drain current as a function of gate-source cut-off voltage; typical values. VDS = 15 V; Tj =25 °C. handbook, halfpage 0 −2 −4 −6 40 30 10 0 20 MGM277 IDSS (mA) VGSoff (V) Fig.3 Common-source transfer admittance as a function of gate-source cut-off voltage; typical values. VDS = 15 V; Tj =25 °C. handbook, halfpage 0 −2 −4 −6 12 0 4 8 MGM278 VGSoff (V) yfs (mS) Fig.4 Common-source output conductance as a function of gate-source cut-off voltage; typical values. VDS = 15 V; Tamb =25 °C. handbook, halfpage 0 −2 −4 −6 80 60 20 0 40 MGM279 gos ( µS) VGSoff (V) Fig.5 Output characteristics; typical values. PMBFJ210. Tj =25 °C. handbook, halfpage 010 8 6 2 0 4 2 468 MGM280 ID (mA) VDS (V) VGS = 0 V −200 mV −400 mV −600 mV −800 mV −1 V −1.4 V −1.2 V |
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