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PMBD2837 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PMBD2837
Description  High-speed double diodes
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PMBD2837 Datasheet(HTML) 4 Page - NXP Semiconductors

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1996 Sep 18
4
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2837; PMBD2838
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF =1mA
−
715
mV
IF =10mA
−
855
mV
IF =50mA
−
1V
IF = 150 mA
−
1.25
V
IR
reverse current
see Fig.5
PMBD2837
VR =30V
−
100
nA
VR =30V; Tj = 150 °C
−
40
µA
PMBD2838
VR =50V
−
100
nA
VR =50V; Tj = 150 °C
−
50
µA
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
−
2.5
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA; see Fig.7
−
4ns
Vfr
forward recovery voltage
when switched from IF = 10 mA;
tr = 20 ns; see Fig.8
−
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
360
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W


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